| 摘要 |
Methods for forming a metal contact in a semiconductor device. In one example embodiment, a method for forming a metal contact in a semiconductor device includes various steps. First, an interlayer insulating film is formed over a silicon substrate. Next, an insulating film is formed over the interlayer insulating film. Then, a photoresist pattern is formed on the insulating film. Next, the insulating film, the interlayer insulating film, and the silicon substrate are selectively etched using the photoresist pattern as an etch mask in order to form a contact trench. Then, the photoresist pattern is removed. Next, impurity ions are implanted into a region beneath the contact trench using the selectively-etched insulating film as a mask. Then, the selectively-etched insulating film and the contact trench are isotropically etched. Next, the contact trench is filled with a metal material.
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