| 摘要 |
<p>An LDMOS(Lateral Double Diffused Metal Oxide Semiconductor) transistor is provided to prevent flowing disturbance of a current at on-state due to a shallow trench isolation by forming a gate in a partial region of the shallow trench isolation. In a first conductive type semiconductor substrate(100), an active region is limited by a shallow trench isolation(110). A second conductive type body region(120) is arranged in a partial region of a top part of the semiconductor substrate. A first conductive type source region(140) is arranged in a top part of the body region. A first conductive type expanded drain region(130) is arranged in a fixed region of a top part of the semiconductor substrate, and is separated from the body region. A gate insulation film(160) is arranged on the first conductive type semiconductor substrate adjacent to the first conductive type source region among a top region of the second conductive type body region. A gate conductive film(170) is arranged from the first conductive type source region to a fixed part inside the shallow trench isolation.</p> |
