发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device in which reliability of a specific area can be secured. <P>SOLUTION: The nonvolatile semiconductor storage device includes: a memory cell array in which electrically rewritable nonvolatile memory cells are arranged; a register that holds good/bad information on the specific area that requires high reliability in the user accessible area of the memory cell array; and an address conversion circuit that performs internal address conversion control so as to internally access a backup area in the user accessible area on the basis of the good/bad information in the register when the specific area is bad and is accessed, and so as to internally access the specific area on the basis of the good/bad information in the register when the specific area is bad and the backup area is accessed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009146548(A) |
申请公布日期 |
2009.07.02 |
申请号 |
JP20070325383 |
申请日期 |
2007.12.18 |
申请人 |
TOSHIBA CORP |
发明人 |
SHIRAKAWA MASANOBU;YAMAMURA TOSHIO |
分类号 |
G11C29/04;G11C16/02;G11C16/06 |
主分类号 |
G11C29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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