发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device in which reliability of a specific area can be secured. <P>SOLUTION: The nonvolatile semiconductor storage device includes: a memory cell array in which electrically rewritable nonvolatile memory cells are arranged; a register that holds good/bad information on the specific area that requires high reliability in the user accessible area of the memory cell array; and an address conversion circuit that performs internal address conversion control so as to internally access a backup area in the user accessible area on the basis of the good/bad information in the register when the specific area is bad and is accessed, and so as to internally access the specific area on the basis of the good/bad information in the register when the specific area is bad and the backup area is accessed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009146548(A) 申请公布日期 2009.07.02
申请号 JP20070325383 申请日期 2007.12.18
申请人 TOSHIBA CORP 发明人 SHIRAKAWA MASANOBU;YAMAMURA TOSHIO
分类号 G11C29/04;G11C16/02;G11C16/06 主分类号 G11C29/04
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