| 摘要 |
A manufacturing method of a CMOS image sensor is provided to minimize ion damage in a top side of a photo diode by forming thickness of a gate insulation film formed on a photo diode region thicker than a different region. An active region and a photo diode region are defined inside a surface of a wafer. A first gate insulation film(16) for a high voltage region and a second gate insulation film(17) for a low voltage region form a logic transistor. A third gate insulation film(13a) is formed on the surface of the wafer. Thickness of the third gate insulation film is thicker than the first gate insulation film and the second gate insulation film. The third gate insulation film corresponding to a rest part except for the photo diode region is removed through a photo process and an etching process. At least one among the first gate insulation film and the second gate insulation film is formed through at least one photo process and an etching process. The gate insulation films are an oxide film. The etching process for removing the third gate insulation film part corresponding to the rest part except for the photo diode region is a wet etching process.
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