| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor that can suppress the variation of its characteristics. SOLUTION: This thin film transistor has: a semiconductor layer 4 made of polycrystalline or amorphous silicon, which is provided on a glass substrate 2 and has an end part 5 formed by etching; a source region 8 and a drain regions 9 provided on both sides of the semiconductor layer 4 respectively; a channel region 10 which is provided between the source and drain regions 8 and 9 and has a channel width of≤1μm; a gate electrode 7 provided on the channel region 10 through a gate insulating film 6; and an insulating film 11 which is insulated so as not to cause a current to flow to the end part 5 covered with the gate electrode 7 in a channel breadthwise direction of the channel region 10. Such a structure is given that the end part 5 covered with the gate electrode 7 doesn't contribute to a threshold voltage. COPYRIGHT: (C)2009,JPO&INPIT
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