| 摘要 |
<p>Disclosed is a nitride semiconductor element manufacturing method wherein the magnesium activation ratio after annealing is permitted to be a prescribed value or more, irrespective of an Al composition and a residual hydrogen concentration in a p-type nitride semiconductor layer, by forming the p-type nitride semiconductor layer by doping magnesium and carbon so that the concentration ratio of the magnesium and the carbon in the layer is the prescribed value. The nitride semiconductor element has a p-type laminated body wherein a plurality of p-type nitride semiconductor layers expressed as AlXGa1-XN (0=x=1) are laminated. The p-type nitride semiconductor layer is formed by doping magnesium and carbon so that the concentration ratio of the magnesium and the carbon in the layer is the prescribed value, and that the magnesium activation ratio after annealing is the prescribed value or more.</p> |
