| 摘要 |
A method for forming an isolation film of a semiconductor device is provided to prevent generation of a void inside an isolation film by securing depth of a trench through additional etching of a low surface of a trench. A trench(105) for isolating a device having a fixed side wall slope is formed by etching an isolation region of a semiconductor substrate(100). A liner insulation film(106A) is formed on a side wall of the trench for isolating the device. A depth of the trench for isolating the device is increased by etching a low surface of the trench for isolating the device. An isolation film is formed by filling the trench for isolating the device with an insulation film. A tunnel insulation film(101) and a charge storage layer(102) are formed on the semiconductor substrate. A depth of the trench for isolating the device is increased by etching the low surface of the trench for isolating the device.
|
