发明名称 |
NONVOLATILE MEMORY DEVICES THAT UTILIZE DUMMY MEMORY CELLS TO IMPROVE DATA RELIABILITY IN CHARGE TRAP MEMORY ARRAYS |
摘要 |
A charge trap flash memory device includes a flash memory array having at least a first page of charge trap memory cells therein electrically coupled to a first word line. The first page of charge trap memory cells includes a plurality of addressable memory cells configured to store data to be retrieved during read operations and a plurality of immediately adjacent non-addressable "dummy" memory cells configured to store dummy data that is not retrievable during the read operations. The plurality of dummy memory cells include at least one auxiliary dummy memory cell that operates as a buffer against lateral hole transfer within a charge trap layer of the array.
|
申请公布号 |
US2009168532(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080164533 |
申请日期 |
2008.06.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEL JONGSUN;SHIN YOOCHEOL;SIM JAESUNG |
分类号 |
G11C16/06;H01L29/792 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|