| 摘要 |
<p>A silicon ingot in which 2-dimensional line defects are controlled, a wafer, an epitaxial wafer, a method and an apparatus for manufacturing the same are provided to reduce generation of a screw dislocation due to a strong horizontal magnetic field by using a HMCZ(Horizontal Magnetic Czochralski) method including a top heat shielding body. A top heat shielding body(100) of a ring type is arranged around a silicon single crystalline ingot, and shields a heat from a heater(200) and a silicon solution. The top heat shielding body includes a top surface, an outer wall surface(110), an inner wall surface(121~124), and a bottom surface(131~134). The outer wall surface is vertically extended about a surface of the silicon solution downwardly. The inner wall surface comprises four surfaces. A first surface is vertically extended like the outer wall surface, and is faced with the outer wall surface. A second surface is downwardly extended, and has a fixed angle from a horizontal surface toward the ingot in a bottom part of the first surface.</p> |
