| 摘要 |
A method for forming multi capacitor is provided to manufacture the multi capacitors having the different capacitance at the same time by forming the insulating layer pattern and the bottom electrode using a dry etching. A conductive layer(14), an insulating layer(16) and an etching mask layer are successively integrated on the upper side of semiconductor substrate(10). The etching mask layer is patterned and an etch mask pattern(18a) is formed. The step height is formed by etching the part of insulating layer which is exposed by the etch mask pattern. The etch mask pattern is removed. The insulating layer pattern and the bottom electrode having the mutually different thickness is formed by selectively etching the part of the conductive layer and the insulating layer in which the step height is formed. The formation of the step height is progressed through the wet etch process.
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