发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device can ensure a sufficient margin between a column select signal and a column address signal when a delay time of the column select signal is increased to improve an address access time during a write operation. The semiconductor memory device includes a discrimination signal generating circuit configured to generate a discrimination signal activated in a write operation of the device, and a selective delay circuit configured to selectively delay a column address in response to the discrimination signal.
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申请公布号 |
US2009168567(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080165030 |
申请日期 |
2008.06.30 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KIM KYUNG-WHAN;PARK EUN-YOUNG |
分类号 |
G11C7/22 |
主分类号 |
G11C7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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