| 摘要 |
Apparatus and method for memory sanitization is disclosed, including a memory, the memory including-in whole or in part-multiple layers of memory, and control logic configured to perform a sanitize operation on a portion of the memory. In one example, a third dimensional memory array can constitute at least a portion of the multiple layers of memory. The multiple layers of memory may include non-volatile two-terminal cross-point memory arrays. Each non-volatile two-terminal cross-point memory array can include a plurality of two-terminal memory elements that store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the terminals of the two-terminal memory element. The two-terminal memory elements retain stored data in the absence of power. The non-volatile two-terminal cross-point memory arrays can be vertically stacked upon one another and may be positioned on top of a logic plane that includes active circuitry.
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