摘要 |
An MIM(Metal Insulator Metal) capacitor is provided to offset a contrary second voltage coefficient value by performing two different dielectric thin films having a similar absolute value into a stack structure. A bottom capacitor(BC) is formed by a first metal line(12), a first dielectric film(14), and a second metal line(22). A top capacitor(TC) is formed by the second metal line, a second dielectric film(24), and a third metal line. A first metal thin film(16) is formed on the first dielectric film. A second metal thin film(26) is formed on the second dielectric film. Via plugs(30a,30b,30c) connect the first metal thin film to the second metal line, the second metal thin film to the third metal line, and the first metal line to the third metal line, and delivers electric signals. The first dielectric film and the second dielectric film have voltage coefficient of an opposite code.
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