| 摘要 |
PROBLEM TO BE SOLVED: To prevent breaking of the wires of source and drain electrodes of a photo-sensor, while taking their adhesiveness to amorphous silicon of the photo-sensor into consideration. SOLUTION: The photo-sensor having a TFT array substrate, having an element region 102 wherein thin-film transistors 101 are arranged in the form of an array has a passivation film 8 provided on the upper portion of each thin-film transistor 101, wherein each contact hole CH1 is formed and a photo diode 100 connected to a drain electrode 7 of each thin-film transistor 101 via each contact hole CH1. Each passivation film 8 and each gate insulating film 3 are removed, in a periphery region 103 existing on the outer side of the element region 102 of the TFT array substrate. Furthermore, the edge of each passivation film 8 of the periphery region 103 is formed at a position identical to or on the outside of the edge of the gate insulating film 3 of the periphery of the substrate. COPYRIGHT: (C)2009,JPO&INPIT
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