| 摘要 |
PROBLEM TO BE SOLVED: To reduce sizes of the crystalline grains, by improving the surface morphology of a polysilicon germanium film. SOLUTION: The method includes: a step of forming an amorphous silicon film on a substrate under a first pressure; and a step of forming the polysilicon germanium film over the amorphous silicon film under a second pressure, wherein for the second pressure, the pressure at the initial phase of the film formation is 100 Pa or more and 150 Pa or less, and the pressure at the terminal phase of the film formation is 30 Pa or more and 60 Pa or less. COPYRIGHT: (C)2009,JPO&INPIT
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