| 摘要 |
A gate structure and a method of semiconductor device are provided to increase the reliability of semiconductor device by preventing the short between the contacts. A gate electrode(404) is formed on the upper part of silicon substrate(400) of the active area. The source and the drain of the silicon substrate are formed at the left and right side of gate electrode. An oxide layer spacer(410) is formed on a side wall of gate electrode. The nitride layer is formed between the gate electrode and the side wall spacer. A nitride layer(412) for stopper is formed on the silicon substrate including the space between the spacer and the gate electrode.
|
