| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a capacitor structure improved in electrical characteristics and suppresses an operational defect caused by capacitor formation. SOLUTION: A semiconductor device includes: a conducting plug provided in an interlayer insulating film on a semiconductor substrate; and a capacitor including a lower electrode provided over the conducting plug, the lower electrode being connected to the conducting plug, a dielectric film provided on the lower electrode, and an upper electrode provided on the dielectric film, wherein the lower electrode includes a conducting pillar and a conducting outer layer provided over at least a circumferential side surface of the conducting pillar. The dielectric film covers at least a circumferential side surface of the lower electrode, and is provided in contact with the conducting outer layer. COPYRIGHT: (C)2009,JPO&INPIT
|
