发明名称 INNER CRYSTALLIZATION CRUCIBLE AND PULLING METHOD USING THE CRUCIBLE
摘要 A vitreous silica crucible for pulling single-crystal silicon, comprising a surface glass layer having a thickness of 100 mum from an inner surface of the crucible, and a glass layer provided below the surface glass layer in a thickness direction of the crucible and extending to a depth of 1 mm from the inner surface of the crucible. The concentration of OH groups in the surface glass layer is 90 ppm or less, and the concentration of OH groups in the glass layer is equal to or more than 90 ppm and equal to or less than 200 ppm. The bubble content in the glass layer is 0.1% or less.
申请公布号 US2009165700(A1) 申请公布日期 2009.07.02
申请号 US20080324978 申请日期 2008.11.28
申请人 JAPAN SUPER QUARTZ CORPORATION 发明人 KISHI HIROSHI;KANDA MINORU
分类号 C30B15/10;C30B15/00 主分类号 C30B15/10
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