POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR USING MILC AND METHOD FOR FABRICATING THE SAME

摘要

A polycrystalline silicon thin film transistor using metal induced lateral crystallization and a manufacturing method thereof are provided to perform a property of high performance and high quality and to have a LDD(Lightly Doped Drain) structure by including a region having low resistance and high resistance inside a source region and a drain region. An amorphous silicon layer is formed on an insulation substrate(10). An active region(20c) is formed by patterning the silicon layer. A first crystallization induced metal pattern and a second crystallization induced metal pattern are partly formed in a position in which a source region(25a,60b) and a drain region(25b,60c) of the active region are formed. A part of a top layer of an exposed active layer is etched by using the first crystallization induced metal pattern and the second crystallization induced metal pattern as a mask. The active region made of amorphous silicon is crystallized through a MIC(Metal Induced Crystallization) and MILC(Metal Induced Lateral Crystallization) thermal process using the first crystallization induced metal pattern and the second crystallization induced metal pattern. A gate insulation film and a gate electrode(50) are formed on the crystallized active region.