| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose structure is simplified, wherein the facilitation of manufacturing process is achieved and the production of a warpage in die bonding of a semiconductor chip is controlled. SOLUTION: The semiconductor device includes a semiconductor substrate 1 on whose one surface a plurality of electrodes 5-7 are formed, a low-dielectric-constant highpolymer film 11 where the gate electrode 5 and drain electrode 6 are insulated from the source electrode 7, and which is formed on the gate electrode 5 and drain electrode 6 so as not to cover the source electrode 7, and a chip surface electrode 12 which is formed on the low-dielectric-constant 11 and source electrode 7, and is connected to a ground potential. The ground potential is provided for the source electrode 7 through the chip surface electrode 12. COPYRIGHT: (C)2009,JPO&INPIT
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