| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an element forming substrate which acquires a crystallographic surface while avoiding influence of polarity. SOLUTION: The manufacturing method for an element forming substrate includes a step for preparing a GaN substrate 120 which has an a-surface or m-surface as a principal surface, a step for masking the principal surface of the GaN substrate 120 with a mask 160, and a step for exposing the masked GaN substrate 120 to an etchant to form the crystallographic surface. As the etchant, a potassium hydroxide (KOH) may be used. The element forming substrate can be used especially for manufacturing a semiconductor laser diode, and the crystallographic surface can be used as a mirror plane. COPYRIGHT: (C)2009,JPO&INPIT
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