SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which does not easily generate mitigation in a strain generation layer. SOLUTION: The semiconductor device includes a gate electrode 15 formed on a semiconductor substrate 11, an inner side sidewall 17B whose cross section is L-shaped, formed on both side faces of the gate electrode 15, and the strain generation layer 19 embedded in both side regions of the gate electrode 15 in the semiconductor substrate 11. The inner side sidewall 17B is composed of a carbon-containing silicon oxide film containing carbon≥5×1019/cm3. The strain generation layer 19 has a carbon-containing silicon epitaxial layer containing carbon of≥1%. COPYRIGHT: (C)2009,JPO&INPIT