发明名称 Method for producing silicon solar cell, involves producing porous silicon layer at lower partial zones of emitter surface not covered by etching barrier
摘要 <p>The method involves producing a two-dimensionally extending emitter (5) at an emitter surface of a solar cell substrate (21). A porous silicon layer (27) is produced at lower partial zones (9) of the emitter surface which is not covered by an etching barrier (25). The porous silicon layer is oxidized and back-etched. An independent claim is included for silicon solar cell.</p>
申请公布号 DE102007062750(A1) 申请公布日期 2009.07.02
申请号 DE20071062750 申请日期 2007.12.27
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;UNIVERSITAET KONSTANZ 发明人 HAHN, GISO;HAVERKAMP, HELGE;RAABE, BERND;DASTGHEIB-SHIRAZI, AMIR;BOCK, FELIX
分类号 H01L31/18;H01L31/06 主分类号 H01L31/18
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