| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor device for covering the entire chip excluding its back with a passivation film and easily handling a substrate. SOLUTION: The manufacturing method includes: a cutting formation process for forming a cutting 3 having scheduled depth at a part where no integrated circuits are manufactured on a first main surface of a semiconductor substrate 1, namely a compound semiconductor substrate, having a region 2 including an integrated circuit on the first main surface by dicing; a passivation film deposition process for depositing a passivation film 4 on the first main surface including the surface of the cutting 3; and a polishing process for polishing the second main surface of the semiconductor substrate 1 until the thickness of the semiconductor substrate 1 becomes equal to scheduled depth after the passivation film deposition process. COPYRIGHT: (C)2009,JPO&INPIT
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