发明名称 ION ASSISTED DEPOSITION METHOD FOR FORMING MULTILAYER FILM
摘要 An ion assisted deposition (IAD) method for forming a film on a substrate is disclosed. The film includes a number of layers. The substrate is bombarded by an ion source with a low ion energy at a initial period of forming each of the layers and a high ion energy during a majority period of forming each of the layers after the respective initial period.
申请公布号 US2009166185(A1) 申请公布日期 2009.07.02
申请号 US20080189097 申请日期 2008.08.08
申请人 HON HAI PRECISION INDUSTRY CO., LTD. 发明人 CHIEN SHIH-CHE
分类号 C23C14/34 主分类号 C23C14/34
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