| 摘要 |
A semiconductor device includes a semiconductor wafer, a source region and a drain region formed within the semiconductor wafer, a gate electrode formed on the semiconductor wafer between the source region and the drain region, an interlayer film formed on the semiconductor wafer and the gate electrode, and a dummy floating pattern embedded into the interlayer film, having a film containing metal or a metallic compound having tensile stress or compressive stress and formed to be spaced from the semiconductor wafer and the gate electrode.
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