| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to improve uniformity in an insulating pattern by excluding the isotropic etch. A trench gate pattern(30) is formed inside a wafer(10). The insulating layers with different etching ratios are successively formed on the wafer including the gate pattern. A mask pattern for forming a contact of the gate pattern is formed on the insulating layers. The anisotropic etching is performed by using the mask pattern. The insulating pattern with a stair type pattern is formed by performing a wet etching after removing the mask pattern. The reflow about the wafer including the insulating pattern is performed.</p> |
