| 摘要 |
A method for manufacturing a semiconductor device is provided to remove a defect source due to an SOD(Spin On Dielectric) congelation material by removing a SOD layer in a wafer edge exposure region and an edge bead removal region before a recess gate etching process. A trench is formed in a wafer(S301). An SOD layer is coated to fill the trench(S302). The edge bead removal of the SOD layer is performed to the wider width than the edge bead removal width or the same width when manufacturing the device isolation mask(S303). The SOD layer is cured(S304). The SOD layer is planarized so that the SOD layer remains in only inner part of the trench(S305). The etching process of the SOD layer is performed to reduce the thickness of the SOD layer(S306).
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