发明名称 APPARATUS FOR TREATING A SUBSTRATE
摘要 A substrate processing apparatus is provided to improve alignment reliability by inserting a centering member between a first connection port and a second connection port. A chamber accommodates a wafer and provides a space for performing a process. A remote plasma generating member(700) is located outside the chamber and generates the plasma. A connecting unit connects the chamber and the remote plasma generating member and supplies the plasma generated from the remote plasma generating member. The connecting unit includes a first connection port(820), a second connection port(840) and a centering member(860). The first connection port is provided to the chamber. The second connection port is inserted to the first connection port and is provided to the remote plasma generating member while being inserted into the first concatenated port. The centering member is located between the inner port of the first connection port and the outer wall of the second connection port and aligns the first connection port and the second connection port.
申请公布号 KR20090070597(A) 申请公布日期 2009.07.01
申请号 KR20070138658 申请日期 2007.12.27
申请人 SEMES CO., LTD. 发明人 JEON, CHI HYUNG
分类号 H05H1/24;H05H1/30;H05H1/34 主分类号 H05H1/24
代理机构 代理人
主权项
地址