| 摘要 |
A method for forming a flash memory device is provided to compensate for the etch damage in an edge of a tunnel insulating layer by etching the tunnel insulating layer and a semiconductor substrate after forming a spacer in a sidewall of the conductive layer. A tunnel insulating layer, a first conductive layer, and a device isolation mask pattern(106) are successively formed in a semiconductor substrate(100). A first conductive pattern(104a) is formed by patterning the first conductive layer according to the device isolation mask pattern. A spacer(108) is formed in the sidewall of the first conductive pattern. A tunnel insulating pattern and a trench are formed by etching the tunnel insulating layer and the semiconductor substrate according to the device isolation mask pattern and the spacer. The device isolation layer is formed on the semiconductor substrate where the trench is formed.
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