| 摘要 |
A semiconductor device and method of manufacturing the same is provided to implement an inductor having a high quality factor by reducing a parasitism cap by forming vacuum between Al lines. A first oxide film, a first metal wiring(3), a second oxide film, a first contact plug and a second metal wiring(6) are successively formed on a semiconductor substrate(1). A nitride film is formed on the entire surface of the semiconductor substrate. The second contact plug is formed on the nitride film. The third metal wiring(14) is formed in the semiconductor substrate. The photoresist pattern is formed on the third metal wiring. The third metal wiring is selectively etched by using a photoresist pattern. The photoresist pattern is removed to form a void(20). The protective film(18) is formed in the front side of the semiconductor board.
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