METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

A manufacturing method of semiconductor device and a substrate processing apparatus are provided to form a thin film on a nitride film by supplying the source gas within the treatment basin. A treatment furnace(202) comprises a heater(207) as the heating unit. The heater is the cylindrical shape and is perpendicularly installed. A reaction tube(203) is installed in the inner side of heater. A process chamber(201) is formed in the hollow of reaction tube. A gas nozzle(233) is installed at the lower part of the reaction tube, and passes through the reaction tube. The first gas supply pipe(232a) is connected to the gas nozzle. The third gas supply pipe is connected to the first gas supply pipe. The second gas supply pipe(232b) is connected to the reaction tube.