| 摘要 |
A method for manufacturing a semiconductor device is provided to perform the connection with the outside simply by performing the etching to expose the metal for the connection. An oxide film and a lower metal(330) are successively formed on a wafer(310). A wafer is processed by performing the post process after etching the lower metal. The processed wafer is cut to each die. A predetermined part of the oxide film in contact with the side of the lower metal for connection in the cut die is etched. The connection device and the side of the lower metal are connected and packaged after the etching. The etching is performed until the side of the lower metal for the connection is exposed.
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