| 摘要 |
<p>A method for manufacturing nonvolatile memory device is provided to simplify a process and reduce manufacturing costs by forming a drain contact plug and a source contact plug at one mask process. An inter insulating layer(112B) is formed to cover a substrate formed a first and a second selection transistor and an memory cell. A first contact hole is formed by etching the inter insulating layer to expose a drain region of a first selection transistor and a source region of a second selection transistor. A first and a second contact plug(114,115A) are formed so that the first contact hole be buried, and a hard mask is formed in order to cover the inter-layer insulating film and the first and the second contact plug. The hard mask is etched and the second contact plug upper part is exposed, and a second contact plug is formed by recessing the second contact plug.</p> |
