发明名称 |
Magnetic memory cells and manufacturing methods |
摘要 |
An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.
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申请公布号 |
US7554145(B2) |
申请公布日期 |
2009.06.30 |
申请号 |
US20060610760 |
申请日期 |
2006.12.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU YUAN-HUNG;WU CHIH-TA;CHAO LAN-LIN;TU YEUR-LUEN;LIN WEN-CHIN;TSAI CHIA-SHIUNG |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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