发明名称 Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor
摘要 A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, forming a silicon oxide layer on the surface of the amorphous silicon film, and forming a polycrystalline Si layer by crystallizing the amorphous silicon film.
申请公布号 US7553714(B2) 申请公布日期 2009.06.30
申请号 US20050116276 申请日期 2005.04.28
申请人 SAMSUNG MOBILE DISPLAY CO., LTD. 发明人 JANG KEUN-HO;KIM HYUN-GUE;LEE HONG-RO
分类号 H01L21/20;H01L21/84;H01L21/336;H01L29/786 主分类号 H01L21/20
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