发明名称 |
Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor |
摘要 |
A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, forming a silicon oxide layer on the surface of the amorphous silicon film, and forming a polycrystalline Si layer by crystallizing the amorphous silicon film.
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申请公布号 |
US7553714(B2) |
申请公布日期 |
2009.06.30 |
申请号 |
US20050116276 |
申请日期 |
2005.04.28 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
JANG KEUN-HO;KIM HYUN-GUE;LEE HONG-RO |
分类号 |
H01L21/20;H01L21/84;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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