| 摘要 |
A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film is provided on at least one of the front facet and the rear facet, and the anodic oxide film preferably has a thickness of lambda/4n or an odd integer multiple thereof, where lambda is the wavelength of the laser beam and n is the refractive index of the anodic oxide film.
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