发明名称 |
Method for manufacturing code address memory cell by which a stack insulating film of an oxide film and a nitride film used as a dielectric film in a flash memory is used as a gate oxide film |
摘要 |
The present invention relates to a method manufacturing a code address memory (CAM) cell. The present invention uses a dielectric film in which an oxide film and a nitride film between a floating gate and a control gate in a flash memory cell are stacked as a gate insulating film between a semiconductor substrate and a gate in the CAM cell. Therefore, the present invention can reduce the area of a peripheral circuit region and stably secure repaired data since the CAM cell can be stably driven at a low operating voltage and additional boosting circuit is thus not required.
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申请公布号 |
US7553724(B2) |
申请公布日期 |
2009.06.30 |
申请号 |
US20010029394 |
申请日期 |
2001.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM JUM SOO;JUNG SUNG MUN;CHO MIN KUCK;LEE YOUNG BOK |
分类号 |
G11C15/04;H01L21/336;H01L21/28;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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