| 摘要 |
<p>A method for manufacturing a non-volatile memory device is provided to lower the process price by using amorphose carbon film on mask pattern at once. A method for manufacturing a non-volatile memory device comprises: a step of forming a poly silicon film(24) and hard mask oxide film on a conductive film(21); a step of forming a spacer patter on the hard mask oxide film of memory cell area; a step of etching the hard mask oxide film; a step of removing the spacer pattern; a step of forming photo sensitive pattern on the poly silicon film of select transistor area; a step of etching the poly silicon film; and a step of etching a conductive layer.</p> |
