| 摘要 |
A semiconductor device having a multi-layer wiring structure including a via contact and a manufacturing method thereof are provided to fill a gap of a via hole without causing a defect like a void within the via hole by using a conductive polymer layer forming method through an ECP(Electro-Chemical Plating) process. A semiconductor device having a multi-layer wiring structure includes a second wiring layer(60), an interlayer dielectric, and a conductive polymer plug. The second wiring layer is formed on an upper surface of the first wiring layer. The interlayer dielectric is inserted between the first wiring layer and the second wiring layer. A conductive polymer plug penetrates the interlayer dielectric in order to connect electrically the first wiring layer and the second wiring layer. A via contact includes a barrier layer(40) which is formed between the conductive polymer plug and the first wiring layer and between the conductive polymer plug and the interlayer dielectric.
|
