发明名称 |
INTEGRATED CIRCUIT AND METHOD OF FABRICATION THEREOF |
摘要 |
<p>A method of forming an integrated circuit structure comprising the steps of forming a first and second device region on a surface of a wafer, forming a spacer of a first width on a sidewall of a first gate stack in the first device region, forming a spacer of a second width on a sidewall of a second gate stack in the second device region, with the first width being different from the second width.</p> |
申请公布号 |
SG153008(A1) |
申请公布日期 |
2009.06.29 |
申请号 |
SG20080083438 |
申请日期 |
2008.11.11 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
JINPING LIU;HAI CONG;BINBIN ZHOU;KH ALEX SEE;SHENG ZHOU MEI;CHOO HSIA LIANG |
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