| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to improve electrical performance of the semiconductor device by reducing contact resistance of a contact electrode as to a gate electrode and source/drain regions through a first protrusion pattern. A sacrifice film is formed on an etching target film. A plurality of protrusions are formed on the sacrifice film. A mask pattern is formed on the etching target film by etching the protrusions and the sacrifice films anisotropically. The etching target film is patterned by using the mask pattern as a mask. The etching target film is gate electrode(200) and source/drain regions(400). The gate electrode is formed on the semiconductor substrate. The source/drain regions are formed at one side of the gate electrode.</p> |
