| 摘要 |
<p>A method for forming a contact of an electrostatic discharge device and a semiconductor device and a method for manufacturing the same are provided to reduce a manufacturing cost and to maximize productivity by forming simultaneously a normal contact and a blanket contact. A P-type well layer, an N-type well layer, an N+ region, and a P+ region are formed on a left active region(A) of a single crystalline silicon substrate(105). A first polygate(110) are formed on the single crystalline silicon substrate. A first gate insulating layer(112) is formed between the first poly gate and the single crystalline silicon substrate. A source region, a drain region, and a channel region are formed on a right active region(B) of the single crystalline silicon substrate. A second poly gate(120) is formed on the single crystalline silicon substrate. A second gate insulating layer(122) is formed between the second poly gate and the single crystalline silicon substrate. A PMD(Polysilicon Metal Dielectric) layer(140) is formed on the single crystalline silicon substrate.</p> |
