| 摘要 |
A method for manufacturing a semiconductor device is provided to improve a yield of the semiconductor device by removing effectively various residues generated from a CMP(Chemical Mechanical Polishing) process through a cleaning process using TMH(Tetra-Methyl ammonium Hydroxide). A contact hole is patterned on a semiconductor substrate including a metal line and an interlayer dielectric. The patterned contact hole of the semiconductor substrate is filled with a metal material. A CMP process is performed to polish the metal material in order to expose the interlayer dielectric. A contact plug is formed by performing the CMP process(202). A first cleaning process is performed to clean the semiconductor substrate by using deionized water(204). A second cleaning process is performed to clean the semiconductor substrate by using DHF(Diluted HF)(206). A third cleaning process is performed to clean the semiconductor substrate by using the deionized water(208). A drying process is performed to dry the semiconductor substrate(210).
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