| 摘要 |
PROBLEM TO BE SOLVED: To avoid the problem of a thermal budget to the extension region of a MOS transistor when forming the MOS transistor and a thyristor on the same semiconductor substrate. SOLUTION: In a method of manufacturing a semiconductor apparatus, the thyristor T, where a first p-type region p1, a first n-type region n1, a second p-type region p1, and a second n-type region n2 are bonded successively and a gate is formed in the second p-type region p1, and the MOS transistors 3, 5 having source/drain regions 43, 44, 53, 54 and the extension regions 41, 42, 51, 52 are formed on the semiconductor substrate 11. In the method, the thyristor T is completed by first sidewalls 23, 24 (not shown) formed on the sidewall of a gate electrode 22, then the first sidewalls 23, 24 are removed, and the extension regions 41, 42, 51, 52 are formed. COPYRIGHT: (C)2009,JPO&INPIT
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