| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To eliminate distortion of the shape of a columnar electrode even if a defect in exposure of a plating resist film for columnar electrode formation etc., is caused in a method of manufacturing a semiconductor device called CSP. <P>SOLUTION: On an upper surface of a base metal layer 8 including an upper electrode layer 8, a coating film 25 is formed of a negative type liquid resist first. Then the plating resist film 26 for columnar electrode formation made of a negative type dry film resist is formed on an upper surface of the coating film 25. Then an opening 27 for columnar electrode formation is formed in the plating resist film 26 for columnar electrode formation and the coating film 25 successively. Trailing 28 caused at an inner wall surface bottom of the opening 27 of the coating film 25 owing to a defect in exposure is etched away. Then the columnar electrode is formed in the opening 27 through electrolytic plating. Further, the plating resist film 26 for columnar electrode formation and the coating film 25 are peeled at the same time using resist peeling liquid. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
