SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the life of wiring of a multilayer wiring structure comprising a barrier film consisting of an Mn oxide film which is self-formed on the surface of a Cu wiring pattern. SOLUTION: A carbon-contained film serving as a source of carbon and oxygen is brought into contact with the surface of a Cu wiring pattern where a Cu-Mn alloy layer is formed on a sidewall, which is thermally treated so that Mn atom in the Cu-Mn alloy layer reacts with the carbon atom and oxygen atom from the carbon source, thereby forming an Mn oxide film containing carbon as a barrier film. COPYRIGHT: (C)2009,JPO&INPIT