| 摘要 |
PROBLEM TO BE SOLVED: To provide a switching element capable of stabilizing a potential between multiple gates without increasing insertion loss, and to provide an antenna switch circuit and a high-frequency module using the same. SOLUTION: The switching element includes two ohmic electrodes 39 and 40 formed on a semiconductor substrate so as to form a field-effect transistor, at least two gate electrodes 41 and 42 disposed between the two ohmic contacts, and a conductive region 45 disposed between adjacent gate electrodes. The conductive region has, at one end, a wide portion which is wider than the conductive region sandwiched between the adjacent gate electrodes, and the distance between the adjacent gate electrodes is smaller than the width of the wide portion. Further, resistances 44 and 46 are connected in series between the two ohmic electrodes with the wide portion interposed. COPYRIGHT: (C)2009,JPO&INPIT
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