| 摘要 |
A semiconductor device is provided in which penetration of a metal into a high impurity-doped active region from a side wall portion of a contact hole is prevented by reducing an aspect ratio to improve coverage of a titanium nitride film for the side wall portion of the contact hole, and in which increase in current consumption is eliminated. In a semiconductor device including an interlayer insulating film formed on a silicon substrate, and a interconnection formed of a barrier metal film and an aluminum alloy film and connected to the silicon substrate through a contact hole of the interlayer insulating film, a low-concentration impurity layer is epitaxially grown on a bottom surface of the contact hole, whereby the aspect ratio is reduced to improve coverage of the titanium nitride film for the side wall portion of the contact hole, and penetration of the metal into the high impurity-doped active region from the side wall portion of the contact hole is prevented.
|
