Copper interconnections with improved electromigration resistance and reduced defect sensitivity
摘要
<p>A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms. <IMAGE></p>
申请公布号
EP0881673(A2)
申请公布日期
1998.12.02
申请号
EP19980303611
申请日期
1998.05.08
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
ASHLEY, LEON;DALAL, HORMAZDYAR M.;NGUYEN, DU BINH;RATHORE, HAZARA S.;SMITH, RICHARD G.;SWINTON, ALEXANDER J.;WACHNIK, RICHARD A.